| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive resist material that gives a resist film exhibiting higher resolution and smaller line width roughness compared to a conventional positive resist material, a good pattern profile after exposure, and excellent etching durability, and particularly, a positive resist material using a compound suitable as a base resin of a chemically amplified positive resist material, and a pattern forming method.SOLUTION: The positive resist material comprises a resin represented by general formula (1)-1 and/or (1)-2 and an acid generator. In the formulae, Rand Rrepresent a single bond or an alkylene group; Yand Yrepresent an oxygen atom or -NH-; Yand Yrepresent a single bond when Rand Rare single bonds, and otherwise represent -C(=O)-O-; Xto Xrepresent a hydrogen atom, a hydroxy group, an alkoxy group, an acyloxy group or a carbonyl group; and Rand Rrepresent an acid-labile group having an androstane skeleton.SELECTED DRAWING: None |
