发明名称 |
SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of suppressing peeling of a fixed charge film while suppressing a dark current.SOLUTION: The solid-state imaging device includes: a semiconductor substrate 121 in which a plurality of photodiodes 122 are formed; a groove 121A formed in the depth direction from a light incident side in order to form an element isolation part 127 between adjacent photoelectric conversion elements in the semiconductor substrate 121; a first fixed charge film 123A formed so as to cover a surface of a plane part on the light incident side of the semiconductor substrate 121; and a second fixed charge film 123B formed so as to cover an inner wall surface of the groove 121A formed in the semiconductor substrate 121.SELECTED DRAWING: Figure 2 |
申请公布号 |
JP2016100347(A) |
申请公布日期 |
2016.05.30 |
申请号 |
JP20140233312 |
申请日期 |
2014.11.18 |
申请人 |
SONY CORP |
发明人 |
DOUFUKU TADAYUKI |
分类号 |
H01L27/146;H01L21/76;H01L27/14 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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