发明名称 |
METHOD FOR CORRECTION OF INTRINSIC TEMPERATURE DEPENDENCE OF SILICON PHOTOELECTRIC CONVERTERS |
摘要 |
FIELD: instrument engineering.SUBSTANCE: invention relates to methods of correction of natural temperature dependence of silicon photoconverters and may be used during thermal vacuum tests (TVT) of spacecraft (SC) or component parts thereof using solar radiation simulator. In disclosed method for correction of temperature dependence of silicon photoconverters, nonlinear temperature dependence of a specific photoconverter is determined directly before thermal vacuum tests by measuring temperature and illumination of photoconverter at different levels of illumination, plotting and approximation of curves of obtained data, analysis of angular dependence coefficients with subsequent construction and solution transcendental equation. Following results are achieved: correction of temperature dependence of silicon photoconverter is performed by analytical method, excluding use in vacuum chamber of additional heat-stabilising devices. During TVT, method comprises correcting deviation of photoconverter readings from actual installed illumination within a range of ± 12 %.EFFECT: technical result is simplification of method for correction of temperature dependence of silicon photoconverters.1 cl, 3 dwg |
申请公布号 |
RU2585613(C2) |
申请公布日期 |
2016.05.27 |
申请号 |
RU20140139860 |
申请日期 |
2014.10.01 |
申请人 |
AKTSIONERNOE OBSHSHESTVO "INFORMATSIONNYE SPUTNIKOVYE SISTEMY" IMENI AKADEMIKA M.F. RESHETNEVA" |
发明人 |
KRAT SVETLANA ALEKSANDROVNA;KRAT NIKITA MIKHAJLOVICH;SHAROV ALEKSANDR KONSTANTINOVICH |
分类号 |
G01J1/44;G01D3/028;G01N25/72;G12B7/00;H01L31/04 |
主分类号 |
G01J1/44 |
代理机构 |
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地址 |
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