Semiconductor device and the method for fabricating thereof

摘要

The purpose of the present invention is to provide a semiconductor device capable of preventing a short circuit between a gate and a source or drain contact by using a spacer film at the time of forming the source or drain contact and capable of securing a profile of a source or a drain through high selectivity etching using an ion implantation process, and a method for fabricating the same. The semiconductor device comprises: an active fin which is formed to extend in a first direction; a gate which is formed on the active fin and extends in a second direction intersecting with the first direction; a source or a drain which is formed on the active fin and is disposed at one side of the gate; an interlayer insulating film which covers a gate and a source or a drain; a source or drain contact which penetrates the interlayer insulating film, is connected to the source or the drain, and includes a first contact region and a second contact region disposed below the first contact region; and a spacer film which is formed between the first contact region and the interlayer insulating film. A width of the first contact region in the first direction and a width of the second contact region in the first direction are different from each other on a boundary between the first contact region and the second contact region.