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经营范围
发明名称
Non-Volatile Memory Device
摘要
비휘발성 메모리 소자가 제공된다. 이 소자는 기판, 기판 상의 터널 유전막, 터널 유전막 상의 트랩 절연막, 트랩절연막 상의 고정 전하막, 고정 전하막 상의 블로킹막, 블로킹막 상의 게이트 전극을 포함한다. 상기 블로킹막은 상기 고정 전하막과 다른 물질을 포함한다.
申请公布号
KR101624980(B1)
申请公布日期
2016.05.27
申请号
KR20090055067
申请日期
2009.06.19
申请人
삼성전자주식회사
发明人
장성일;강창석;최정달
分类号
H01L21/8247;H01L27/115
主分类号
H01L21/8247
代理机构
代理人
主权项
地址
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