| 摘要 |
FIELD: glass.SUBSTANCE: invention relates to production of high-purity chalcogenide glass for producing optical elements, light guides and wide-gap semiconductor devices. Invention enables to avoid contamination of obtained chalcogenide glass due to partial decomposition of initial substances, as well as reduces amount of impurities, coming from materials equipment. Method of producing chalcogenide glass involves loading initial substances containing arsenic and sulphur, in flow plasma-chemical reactor, initiating interaction reaction of arsenic and sulphur high-frequency plasma discharge in conditions of nonequilibrium plasma at low pressure to form a charge chalcogenide glass and obtaining of chalcogenide glass. Initial substances used are elementary arsenic As and sulphur S, and inert gas is used as transport and plasma-forming gas. Obtaining of chalcogenide glass is performed by sealing reactor and its installation in swinging furnace, melting and homogenisation of glass-forming compounds and their cooling. Device comprises plasma-chemical reactor and pumping system.EFFECT: reactor is made in form of a flow quartz tube, equipped with plasma-forming system and system of diagnostics, and system for feeding selected gas mixture comprises especially pure quartz reservoirs with loading quartz containers for solid-state arsenic and sulphur.3 cl, 1 dwg, 2 tbl |
