Semiconductor device

摘要

The purpose of the present invention is to provide a semiconductor device having low threshold voltage and reduced on-resistance (Ron). The semiconductor device comprises: a channel layer including a material having a lattice constant different from a substrate, on the substrate; a first gate electrode on the channel layer; a first source area of a first conductive type arranged on one side of the first gate electrode; a first body area of a second conductive type which is arranged on the lower side of the first source area and surrounds the first source area; a first drain area of the first conductive type arranged on the other side of the first gate electrode; a first drift area of the first conductive type which is arranged on the lower side of the first drain area and surrounds the first drain area; and a first stud area which is arranged inside the channel layer and the first drift area and has high impurity concentration than the first drift area.