| 摘要 |
The optoelectronic device comprises microwires or nanowires having active portions (34, 39) between insulated portions (32, 36, 40). The active portions are surrounded by active layers (46, 47) adapted to emit or receive light, and have inclined flanks or a diameter different from the diameter of one of the insulated portions. Each active portion comprises a first portion extended by a second portion. The first portion is closest to a support (14) of the nanowires. The first and second portions are straight-sided and of different diameters or inclined flanks with different inclinations. The optoelectronic device comprises microwires or nanowires having active portions (34, 39) between insulated portions (32, 36, 40). The active portions are surrounded by active layers (46, 47) adapted to emit or receive light, and have inclined flanks or a diameter different from the diameter of one of the two insulated portions. Each active portion comprises a first portion extended by a second portion. The first portion is closest to a support (14) of the nanowires or microwires. The first and second portions are straight-sided and of different diameters or inclined flanks with different inclinations. A portion of the active layer surrounding the first active portion and the portion of the active layer surrounding the second active portion are adapted to transmit or receive the light of different wavelengths. The first portion or the second portion is inclined flanks and has a cross section, which decreases in moving away from the support of the nanowires or microwires or a cross section, and which increases in moving away from the support of the microwires or nanowires. Each nanowire or microwire comprises a third portion extending from the second portion. The third portion is straight flanks or inclined flanks. Each active portion comprises an alternating isolated portion. The alternating isolated portions have a diameter different from the diameter of at least one of the two isolated portions. Each active layer is surrounded by an electrode layer. The active portions have sides oriented in different crystal planes. The active layers surrounding active portions are adapted to emit or receive light of different wavelengths. Each active layer comprises a multiple-quantum well structure. The isolated portions and the active portions predominantly comprise a III-V compound. Each isolated portion is surrounded by a layer (33, 37) of dielectric material having a thickness of an atomic monolayer and 10 nm. The total height of each portion of each nanowire microwire or is >= 500 nm. The outermost portion of the support is the isolated portion. An independent claim is included for a method for manufacturing a optoelectronic device. |
