| 摘要 |
A method for depositing a thin film according to an embodiment of the present invention includes the steps of: forming a protective layer including silicon on a substrate; and forming a sacrificial layer on the protective layer. The protective layer and the sacrificial layer include silicon (Si). The step of forming the protective layer includes the steps of: supplying a precursor including Si; and supplying plasma having activated purge gas. So, the contraction of photoresist can be prevented even if a silicon oxide layer is formed on the photoresist. |
