Semiconductor device and method for fabricating the same

摘要

The purpose of the present invention is to provide a semiconductor device capable of reducing a capacitive coupling phenomenon between a gate and a source and/or a drain and suppressing an abnormal growth of an epitaxial layer by forming a gate spacer by using a low dielectric material in a fin structure, thereby improving operation performance of a semiconductor apparatus. The present invention provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises: a fin-type active pattern which protrudes from a substrate; a gate electrode which is formed on the substrate to intersect with the fin-type active pattern; a gate spacer which is formed on a sidewall of the gate electrode and has a low dielectric constant; and elevated source and drain which are respectively formed on the fin-type active pattern at both sides of the gate electrode. The gate spacer comprises first to third spacers which sequentially come in contact with one another in a direction away from the gate electrode, and a carbon concentration of the second spacer is lower than a carbon concentration of each of the first and third spacers.