THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

According to one embodiment, a thin-film transistor and a method of manufacturing the thin-film transistor provided herein achieve enhanced reliability by preventing a disconnection in a gate insulating film at a position corresponding to an end surface of an oxide semiconductor layer. The oxide semiconductor layer includes a channel region, a source region, and a drain region. The channel region is placed between the source region and the drain region. The gate insulating film covers the oxide semiconductor layer in a range from at least a part of an upper surface to an end surface continuous with the upper surface of the oxide semiconductor layer. The oxide semiconductor layer is formed so as to have an oxygen concentration that becomes lower from a top side to a bottom side and the end surface is inclined so as to diverge from the top side to the bottom side.

主权项

1. A thin-film transistor comprising:
an oxide semiconductor layer including a channel region, a source region, and a drain region, the channel region being placed between the source region and the drain region; a covering layer that covers the oxide semiconductor layer in a range from at least a part of an upper surface to an end surface continuous with the upper surface of the oxide semiconductor layer; a gate electrode arranged at a position spaced from the channel region of the oxide semiconductor layer so as to face the channel region; a source electrode electrically connected to the source region of the oxide semiconductor layer; and a drain electrode electrically connected to the drain region of the oxide semiconductor layer, wherein the oxide semiconductor layer is formed so as to have an oxygen concentration that becomes lower from a top side to a bottom side and the end surface is inclined so as to diverge from the top side to the bottom side.