发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A method of manufacturing a semiconductor device may include forming split gate structures including a floating gate electrode layer and a control gate electrode layer in a cell region of a substrate including the cell region and a logic region adjacent to the cell region. The method may include sequentially forming a first gate insulating film and a metal gate film in the logic region and the cell region, removing the metal gate film from at least a portion of the cell region and the logic region, forming a second gate insulating film on the first gate insulating film from which the metal gate film has been removed, forming a gate electrode film on the logic region and the cell region, and forming a plurality of memory cell elements disposed in the cell region and a plurality of circuit elements disposed in the logic region. |
申请公布号 |
US2016148944(A1) |
申请公布日期 |
2016.05.26 |
申请号 |
US201514919083 |
申请日期 |
2015.10.21 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
YU Tea Kwang;KIM Yong Tae;PARK Jae Hyun;YEOM Kyong Sik |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming split gate structures, each including a floating gate electrode layer and a control gate electrode layer in a cell region of a substrate, the substrate including the cell region and a logic region adjacent to the cell region; sequentially forming a first gate insulating film and a metal gate film in the logic region and the cell region; removing the metal gate film from at least a portion of the cell region and the logic region; forming a second gate insulating film on the first gate insulating film from which the metal gate film has been removed; forming a gate electrode film on the logic region and the cell region; and forming a plurality of memory cell elements disposed in the cell region and a plurality of circuit elements disposed in the logic region by patterning the first and second gate insulating films, the gate electrode film, and a residue of the metal gate film. |
地址 |
Suwon-si KR |