| 发明名称 |
EUV MASK AND MANUFACTURING METHOD BY USING THE SAME |
| 摘要 |
The present disclosure provides a photolithography mask. The photolithography mask includes a substrate that contains a low thermal expansion material (LTEM). A reflective structure is disposed over the substrate. A capping layer is disposed over the reflective structure. An absorber layer is disposed over the capping layer. The absorber layer contains a material that has a refractive index in a range from about 0.95 to about 1.01 and an extinction coefficient greater than about 0.03. |
| 申请公布号 |
US2016147138(A1) |
申请公布日期 |
2016.05.26 |
| 申请号 |
US201514736669 |
申请日期 |
2015.06.11 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Shih Chih-Tsung;Yu Shinn-Sheng;Chen Jeng-Horng;Yen Anthony |
| 分类号 |
G03F1/24 |
主分类号 |
G03F1/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A photolithography mask, comprising:
a substrate that contains a low thermal expansion material (LTEM); a reflective structure disposed over the substrate; a capping layer disposed over the reflective structure; and an absorber layer disposed over the capping layer, wherein the absorber layer contains a material that has a refractive index in a range from about 0.95 to about 1.01 and an extinction coefficient greater than about 0.03. |
| 地址 |
Hsin-Chu TW |
