| 摘要 |
In a film-forming device according to one embodiment, a rotary shaft is connected to a rotary stage. In this film-forming device, a plurality of wafers are placed on a plurality of placement regions arranged along the circumferential direction with respect to the center axis of the rotary shaft, the wafers being held by the rotary stage. The rotary stage is housed in the internal space inside a susceptor. In the internal space, a gas supply mechanism forms a processed-gas flow from the outside of the rotary stage along a direction perpendicular to the center axis. A heat-insulating material is provided in a heat insulation region in the internal space inside the susceptor. The heat insulation region is located further outward from the center axis than are positions in a plurality of placement regions nearest to the center axis, and further inward toward the center axis than are positions in a plurality of placement regions furthest from the center axis. |
