| 摘要 |
Provided is a SiC substrate treatment method for, with respect to a SiC substrate (40) having a groove (41) formed therein, activating ions while preventing roughening of the surface of the substrate. The SiC substrate (40) has, on the surface thereof, an ion implantation region (46) in which ions have been implanted, and has the groove (41) formed in a portion that includes at least the ion implantation region (46). The SiC substrate is subjected to an ionic activation treatment in which the substrate is heated at the Si vapor pressure thereby activating the ions implanted in the SiC substrate (40). Further, the substrate is etched to planarize the surface. |
