SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

This semiconductor device comprises: a semiconductor layer; a gate trench that divides a source region of a first conductivity type in the semiconductor layer; a channel region of a second conductivity type below the source region; a source trench that penetrates the source region and the channel region; an impurity region of the second conductivity type on the bottom and side of the source trench; a source electrode on the semiconductor layer; and a high-concentration impurity region of the second conductivity type, which has a contact part in the surface of the semiconductor layer, said contact part being connected to the source electrode, and penetrates the source region so as to extend to a deeper position than the source region, while having a higher concentration than the impurity region.