| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode which has high breakdown voltage and less reverse leakage current and high ESD resistance.SOLUTION: A Schottky barrier diode which passes current in a vertical direction comprises a plurality of cylindrical P-type diffusion layers or a plurality of spherical P-type diffusion layers, which are embedded in N-type silicon and under a p-type guard ring in a stripe shape, and a distance between the plurality of rows of embedded P-type diffusion layers increases with distance from an anode side toward a cathode side. The plurality of spherical P-type diffusion layers under the guard ring can produce an effect similar to that produced by the plurality of cylindrical P-type diffusion layers.SELECTED DRAWING: Figure 4 |
