Method of Manufacturing Semiconductor Device and Substrate Processing Apparatus

摘要

A method of manufacturing a semiconductor device includes (a) providing a substrate and (b) forming a film including a first element, a second element and a third element in a same group as the second element on the substrate by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a halogen-based source gas including the first element to the substrate; (b-2) supplying a first reactive gas including the second element and reactive with the halogen-based source gas; and (b-3) supplying a second reactive gas including the third element without mixing the second reactive gas with the first reactive gas, wherein the second reactive gas is reactive with the halogen-based source gas and unreactive with the first reactive gas.

主权项

1. A method of manufacturing a semiconductor device, comprising:
(a) providing a substrate; and (b) forming a film comprising a first element, a second element and a third element in a same group as the second element on the substrate by performing a cycle a predetermined number of times, the cycle comprising: (b-1) supplying a halogen-based source gas including the first element to the substrate; (b-2) supplying a first reactive gas including the second element and reactive with the halogen-based source gas; and (b-3) supplying a second reactive gas including the third element without mixing the second reactive gas with the first reactive gas, wherein the second reactive gas is reactive with the halogen-based source gas and unreactive with the first reactive gas.