3-PORT BITCELL ARRAY WITH SHARED FIRST AND SECOND GLOBAL READ WORD LINES AND GLOBAL WRITE WORD LINE ON SAME METAL LAYER

摘要

An apparatus includes an array of bit cells (202, 204, 206, 208) that include a first row of bit cells and a second row of bit cells. The apparatus also includes a first global read word line (240) configured to be selectively coupled to the first row of bit cells and to the second row of bit cells. The apparatus further includes a second global read word line (244) configured to be selectively coupled to the first row of bit cells and to the second row of bit cells. The apparatus also includes a global write word line (242) configured to be selectively coupled to the first row of bit cells and to the second row of bit cells. The first global read word line, the second global read word line, and the global write word line are located in a common metal layer (M4).