| 摘要 |
PROBLEM TO BE SOLVED: To provide a method in which structure support and capacitor electrode fabrication are integrated.SOLUTION: A capacitor structure comprises a substrate 110 including capacitor electrodes 130 formed within a range of an insulation-holding material 120, and a color layer structure 145 in contact with the capacitor electrodes 130. In a method for forming such a memory capacitor structure, the color layer structure 145 is interconnected with the capacitor electrodes 130, and includes an underlying insulation-holding material 120 exposed through openings 155 having random assembled patterns without guide; and then, the insulation-holding material 120 is removed from the capacitor structure. In the method, a self-assembly process is used to form the mutually connected color layer structure 145.SELECTED DRAWING: Figure 2E |
