| 摘要 |
A semiconductor device includes an active pattern provided on a substrate, and a gate electrode provided on the active pattern and intersecting the active pattern. The active pattern includes a first buffer pattern on the substrate, a channel pattern on the first buffer pattern, a doped pattern between the first buffer pattern and the channel pattern, and a second buffer pattern between the doped pattern and the channel pattern. The doped pattern includes graphene with impurities injected thereinto. Thus, additional carriers may be provided for the channel pattern using the doped pattern including graphene with the impurities injected thereinto, thereby improving operational characteristics of a transistor. |
