摘要 |
A semiconductor on insulator multilayer structure is provided. The multilayer comprises a high resistivity single crystal semiconductor handle substrate, an optionally relaxed semiconductor layer comprising silicon, germanium, or silicon germanium, an optional polycrystalline silicon layer, a dielectric layer, and a single crystal semiconductor device layer. |
申请人 |
SUNEDISON SEMICONDUCTOR LIMITED;PEIDOUS, IGOR |
发明人 |
PEIDOUS, IGOR;FEI, LU;LIBBERT, JEFFREY LOUIS;JONES, ANDREW M.;USENKO, ALEX;WANG, GANG;THOMAS, SHAWN G.;KOMMU, SRIKANTH |