| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of terminating crystal bonding on a semiconductor surface, and that has a high heat radiation effect.SOLUTION: A semiconductor device comprises: a drain electrode 5 formed on a semiconductor layer; a source electrode 9 formed on the semiconductor layer; a gate electrode 7 formed on the semiconductor layer and provided between the drain electrode and the source electrode; a first compound semiconductor layer 2 laminated on the drain electrode and on a semiconductor layer provided between the drain electrode and the gate electrode; and a second compound semiconductor layer laminated on the source electrode and on a semiconductor layer provided between the source electrode and the gate electrode.SELECTED DRAWING: Figure 2 |
