METHOD OF CHARACTERIZING AND MODELING LEAKAGE STATISTICS AND THRESHOLD VOLTAGE

摘要

An approach includes deriving an uplift factor as a function of a width of the device for each leakage current component based on an amount of uncorrelated random variations in the leakage current component for one specific width and using the uplift factor as a multiplier for the leakage current component. The approach includes using the uplift factor for sub-threshold drain current as a multiplier of the sub-threshold drain current so that a lowering of nominal threshold voltage of the device occurs in a single simulation run. The approach further includes deriving a threshold voltage mismatch expression related to an amount of an uncorrelated random variation in sub-threshold drain current which is not directly inversely proportional to a square root of the width. The uplift factors and the threshold voltage mismatch expression within a model are used to predict statistical characteristics of the leakage current.

主权项

1. A method implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having programming instructions operable to:
derive an uplift factor as a function of a width of a single-finger semiconductor device for each leakage current component based on an amount of uncorrelated random variations in the leakage current component for one specific width of the semiconductor device and use the uplift factor as a multiplier for the leakage current component; when the semiconductor device is a single-finger transistor, use the uplift factor for sub-threshold drain current as a multiplier of the sub-threshold drain current so that a lowering of nominal threshold voltage of the single-finger device occurs in a single simulation run; derive a threshold voltage mismatch expression which is related to an amount of an uncorrelated random variation in sub-threshold drain current and which is not directly inversely proportional to a square root of the width of the single-finger device; and use the uplift factors and the threshold voltage mismatch expression within a model to predict at least statistical characteristics of the leakage currents.