| 摘要 |
This semiconductor device is provided with: a heat spreader (10); a semiconductor element (20) on the heat spreader; and a bonding material (30) that is arranged between the heat spreader and the semiconductor element. A first heat spreader (11), a second heat spreader (12), and a first heat spreader are sequentially arranged in this order in one in-plane direction of the heat spreader. Each one of the first and second heat spreaders has a plurality of thermal conductivity anisotropic surfaces having high thermal conductivity. The thermal conductivity anisotropic surfaces of the first heat spreader are parallel to the lamination direction or a first direction that is perpendicular to the lamination direction. The thermal conductivity anisotropic surfaces of the second heat spreader are parallel to the lamination direction or a second direction that is perpendicular to the lamination direction. A projected area (21) of the semiconductor element overlaps with the second heat spreader. |
