REDUCING DIRECT SOURCE-TO-DRAIN TUNNELING IN FIELD EFFECT TRANSISTORS WITH LOW EFFECTIVE MASS CHANNELS

摘要

An approach to providing a barrier in a vertical field effect transistor with low effective mass channel materials wherein the forming of the barrier includes forming a first source/drain contact on a semiconductor substrate and forming a channel with a first channel layer on the first source/drain contact. The approach further includes forming the barrier on the first channel layer, and a second channel layer on the barrier followed by forming a second source/drain contact on the second channel layer.

主权项

1. A method of forming a baffler in a vertical field effect transistor with low effective mass channel materials, comprising:
forming a first source/drain contact on a semiconductor substrate; forming a channel with a first channel layer on the first source/drain contact, a barrier on the first channel layer, and a second channel layer on the baffler; and forming a second source/drain contact on the second channel layer.