RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND METHOD FOR OPERATING RESISTIVE RANDOM ACCESS MEMORY

摘要

A resistive random access memory (RRAM) structure including a first transistor, a second transistor and a RRAM cell string is provided. The first transistor and the second transistor are cascaded by electrically connecting a first terminal of the first transistor and the second transistor. The RRAM cell string includes a plurality of memory cells connected with each other and is electrically connected to a second terminal of the first transistor.

主权项

1. A resistive random access memory structure, comprising:
a first transistor and a second transistor, wherein the first transistor and the second transistor are cascaded by electrically connecting a first terminal of the first transistor with the second transistor; and a resistive random access memory cell string, comprising a plurality of memory cells electrically connected to each other, and electrically connected to a second terminal of the first transistor.