A METHOD OF MANUFACTURING HIGH RESISTIVITY SEMICONDUCTOR-ON-INSULATOR WAFERS WITH CHARGE TRAPPING LAYERS
摘要
A method of preparing a single crystal semiconductor handle wafer in the manufacture of a semiconductor-on-insulator device is provided. The single crystal semiconductor handle wafer is prepared to comprise a charge trapping layer, which is oxidized. The buried oxide layer in the resulting semiconductor-on-insulator device comprises an oxidized portion of the charge trapping layer and an oxidized portion of the single crystal semiconductor device layer.
申请公布号
WO2016081313(A1)
申请公布日期
2016.05.26
申请号
WO2015US60674
申请日期
2015.11.13
申请人
SUNEDISON SEMICONDUCTOR LIMITED;PEIDOUS, IGOR
发明人
PEIDOUS, IGOR;LIBBERT, JEFFREY LOUIS;KOMMU, SRIKANTH;JONES, ANDREW M.;PRATT, SAMUEL CHRISTOPHER;MENDEZ, HORACIO JOSUE;STANTON, LESLIE GEORGE;DICKINSON, MICHELLE RENE