| 摘要 |
PROBLEM TO BE SOLVED: To disclose a technology capable of reducing a leakage current when an IGBT is in an on-state.SOLUTION: A semiconductor substrate 12 has an IGBT region 70. The IGBT region 70 comprises an n-type emitter region 30, a p-type IGBT top body region 32, an n-type IGBT barrier region 34, an n-type IGBT pillar region 35, and a p-type IGBT bottom body region 36. The semiconductor substrate 12 further comprises an n-type drift region 38, a p-type collector region 40, and an n-type cathode region 42. A depth from a surface 12a of the semiconductor substrate 12 at a peak position P1 of n-type impurity concentration at a part connected with the IGBT pillar region 35, of the IGBT barrier region 34 is different from a depth at a peak position P2 of the n-type impurity concentration at a part contacted with the gate insulating film 16, of the IGBT barrier region 34.SELECTED DRAWING: Figure 1 |
