PATTERN WAFER FOR LEDS, EPITAXIAL WAFER FOR LEDS AND METHOD OF MANUFACTURING THE EPITAXIAL WAFER FOR LEDS

摘要

A pattern wafer (10) for LEDs is provided with an uneven structure A (20) having an arrangement with n-fold symmetry substantially on at least a part of the main surface, where in at least a part of the uneven structure A (20), a rotation shift angle Θ meets 0°<Θ≦(180/n)° in which Θ is the rotation shift angle of an arrangement axis A of the uneven structure A (20) with respect to a crystal axis direction in the main surface, and a top of the convex-portion of the uneven structure A (20) is a corner portion with a radius of curvature exceeding “0”. A first semiconductor layer (30), light emitting semiconductor layer (40) and second semiconductor layer (50) are layered on the uneven structure A (20) to constitute an epitaxial wafer (100) for LEDs. It is possible to provide the pattern wafer for LEDs and epitaxial wafer for LEDs with cracks and internal quantum efficiency IQE improved.

主权项

1. A pattern wafer for an LED, comprising:
an uneven structure A having an arrangement with n-fold symmetry substantially on at least a part of a main surface, wherein in at least a part of the uneven structure A, a rotation shift angle Θ meets 0°<Θ≦(180/n)° in which Θ is the rotation shift angle of an arrangement axis A of the uneven structure A relative to a crystal axis direction of the pattern wafer for an LED in the main surface, and a top of the convex-portion of the uneven structure A is a corner portion with a radius of curvature exceeding “0”.