发明名称 PATTERN VERIFYING METHOD
摘要 The present invention provides a pattern verifying method. First, a target pattern is decomposed into a first pattern and a second pattern. A first OPC process is performed for the first pattern to form a first revised pattern, and a second OPC process is performed for the second pattern to form a second revised pattern. An inspection process is performed, wherein the inspection process comprises an after mask inspection (AMI) process, which comprises considering the target pattern, the first pattern and the second pattern.
申请公布号 US2016147140(A1) 申请公布日期 2016.05.26
申请号 US201514601250 申请日期 2015.01.21
申请人 UNITED MICROELECTRONICS CORP. 发明人 Hsieh Te-Hsien;Chen Ming-Jui;Wang Cheng-Te;Lee Jing-Yi;Ma Jian-Yuan;Chen Yan-Chun
分类号 G03F1/36;G03F1/72;H01L21/308;G03F1/84;H01L21/66;H01L21/027 主分类号 G03F1/36
代理机构 代理人
主权项 1. A pattern verifying method related to a double patterning technology (DPT) process, comprising: decomposing the target pattern into a first pattern and a second pattern by using a computer system; performing a first optical proximity correction (OPC) process for the first pattern to obtain a first revised pattern, and performing a second OPC process for the second pattern to obtain a second revised pattern; and performing an inspection process, wherein the inspection process comprises an after mask inspection (AMI) process, which comprises considering the target pattern, the first pattern and the second pattern.
地址 Hsin-Chu City TW