Diamond Like Carbon (DLC) as a Thermal Sink in a Selector Stack for Non-Volatile Memory Application

摘要

Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). A structure including diamond-like carbon (DLC) can be used to surround the semiconductor layer of the MSM stack. The high thermal conductivity of the DLC structure may serve to remove heat from the selector device while higher currents are flowing through the selector element. This may lead to improved reliability and improved endurance.

主权项

1. A nonvolatile memory cell comprising:
a first electrode layer; a selector element; wherein the selector element comprises a first conductive layer, a first interface layer, a semiconductor layer, a second interface layer, and a second conductive layer; wherein the semiconductor layer is further surrounded by a layer of diamond like carbon (DLC), wherein the DLC layer comprises a concentration of hydrogen of less than 5 atomic %; and a second electrode layer.