CIRCUIT CONFIGURATION AND MANUFACTURING PROCESSES FOR VERTICAL TRANSIENT VOLTAGE SUPPRESSOR (TVS) AND EMI FILTER

摘要

A vertical TVS (VTVS) circuit includes a semiconductor substrate for supporting the VTVS device thereon having a heavily doped layer extending to the bottom of substrate. Deep trenches are provided for isolation between multi-channel VTVS. Trench gates are also provided for increasing the capacitance of VTVS with integrated EMI filter.

主权项

1. A multi-channel TVS device integrated with an EMI filter comprising:
a first and a second vertical TVS (VTVS) comprising vertically stacked PN junctions disposed between doped regions of opposite conductivity types disposed in an epitaxial layer supported on a semiconductor substrate wherein each of the first VTVS and second VTVS having a top dopant region disposed underneath a top surface of the substrate connected to a first electrode functioning as an input terminal and a first cathode electrode and a second electrode functioning as an output terminal and a second cathode electrode wherein the first and second VTVS are separated by a deep insulation trench; the substrate further comprising a heavily doped bottom layer of a first conductivity type functioning as an anode electrode; and a conductive strip extending laterally over the top of the deep insulation trench wherein the conductive strip is electrically connected to the input terminal and output terminal to function with the stack PN junctions as an integrated EMI filter.