SEMICONDUCTOR ELEMENT SUBSTRATE, AND METHOD FOR PRODUCING SAME

摘要

A diffusion time when forming an isolation region is shortened without deteriorating strength against wafer cracks. A plurality of circular holes 4a and 4b are respectively provided side by side on both surfaces of the wafer discontinuously and intermittently along a scribe line SL between semiconductor devices which are adjacent to each other, and isolation diffusion layers 5a and 5b in a single conductivity type (here, P-type) used for element isolation are respectively formed around the plurality of circular holes 4a and 4b so as to reach a center portion in a depth direction from the both surfaces of the wafer and to be at least partially overlapped with each other between adjacent holes and between upper and lower bottom surfaces.

主权项

1. A semiconductor element substrate, wherein a plurality of semiconductor devices are arranged in a matrix manner, a plurality of holes are provided discontinuously along a scribe line between the semiconductor devices which are adjacent to each other, and isolation diffusion layers used for element isolation are respectively formed around the plurality of holes.