TAMPER-RESISTANT NON-VOLATILE MEMORY DEVICE

摘要

A non-volatile memory device includes a memory cell array including memory cells, each having a resistance value reversibly transitioning among resistance value ranges in a variable state in accordance with application of different electrical signals, a control circuit that, in operation, receives a control signal, a read circuit that, in operation, obtains pieces of resistance value information each relating to the resistance value of one of the memory cells in accordance with the control signal, and an arithmetic circuit that, in operation, calculates a binary reference value based on at least a part of the pieces of resistance value information. In operation, the read circuit selectively assigns, based on the binary reference value, one of two values to each of the pieces of resistance value information.

主权项

1. A non-volatile memory device comprising:
a memory cell array including memory cells arranged in an array, each of the memory cells having a resistance value and having a property that the resistance value reversibly transitions among resistance value ranges in a non-volatile manner in a variable state in accordance with application of different electrical signals; a control circuit that, in operation, accepts an input of a control signal; a read circuit that, in operation, obtains pieces of resistance value information each relating to the resistance value of one of the memory cells in accordance with the control signal input to the control circuit; and an arithmetic circuit that, in operation, calculates a binary reference value based on at least a part of the pieces of resistance value information, wherein, in operation, the read circuit selectively assigns, based on the binary reference value, one of two values to each of the pieces of resistance value information, thereby generating individual discrimination information.