发明名称 |
DIODE AND SIGNAL OUTPUT CIRCUIT INCLUDING THE SAME |
摘要 |
A diode includes: a p-type semiconductor substrate; an n-type semiconductor layer; a p-type isolation region formed to surround a predetermined region of the n-type semiconductor layer on the p-type semiconductor substrate; an n-type buried layer formed across the p-type semiconductor layer and the n-type semiconductor layer within the predetermined region; an n-type collector wall formed in the n-type semiconductor layer; a p-type anode region and a plurality of n-type cathode regions formed in a diode formation region; and a p-type guard ring formed to surround the diode formation region in a region between the diode formation region of the surface layer of the n-type semiconductor layer and the p-type isolation region. A transistor for reducing a leakage current is formed by the p-type anode region, the p-type guard ring, and an n-type semiconductor between the p-type anode region and the p-type guard ring. |
申请公布号 |
US2016148996(A1) |
申请公布日期 |
2016.05.26 |
申请号 |
US201615010052 |
申请日期 |
2016.01.29 |
申请人 |
Rohm Co., Ltd. |
发明人 |
Yano Yuji |
分类号 |
H01L29/06;H01L29/78;H01L29/10 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
1. A diode, comprising:
a p-type semiconductor substrate; an n-type semiconductor layer formed on the p-type semiconductor substrate; a p-type isolation region formed to surround a predetermined region of the n-type semiconductor layer on the p-type semiconductor substrate; a p-type anode region and a plurality of n-type cathode regions formed in a diode formation region, which is within the predetermined region in a surface layer of the n-type semiconductor layer; and a p-type guard ring formed in a region between the diode formation region of the surface layer of the n-type semiconductor layer and the p-type isolation region, the p-type guard ring being electrically connected to the plurality of n-type cathode regions, wherein a transistor for reducing a leakage current is formed by the p-type anode region, the p-type guard ring, and an n-type semiconductor between the p-type anode region and the p-type guard ring. |
地址 |
Kyoto JP |