发明名称 |
Micromechanical sensor device and corresponding manufacturing method |
摘要 |
A micromechanical sensor device, and a corresponding method, including an ASIC substrate having first front and rear sides, a first rewiring element on the first front side; a MEMS substrate having a second front side, and a second rear side having a base substrate and a second rewiring element formed thereon; a micromechanical functional layer having at least one movable sensor structure, and which is on the second front side of the second rewiring element; a capping element having third front and rear sides, the third rear side being applied to the second front side for capping the sensor structure; and a recess formed in the base substrate on the second rear side, or in the capping element on the third front side, and within which the ASIC substrate is suspended on a flexible layered first suspension element via the first rewiring element, forming a cavity surrounding the ASIC chip. |
申请公布号 |
US2016146850(A1) |
申请公布日期 |
2016.05.26 |
申请号 |
US201514931069 |
申请日期 |
2015.11.03 |
申请人 |
Robert Bosch GmbH |
发明人 |
Reinmuth Jochen |
分类号 |
G01P15/125 |
主分类号 |
G01P15/125 |
代理机构 |
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代理人 |
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主权项 |
1. A micromechanical sensor device, comprising:
an ASIC substrate having a first front side and a first rear side, a first rewiring element being formed on the first front side; a MEMS substrate having a second front side, and a second rear side having a base substrate and a second rewiring element formed thereon; a micromechanical functional layer in which at least one movable sensor structure is formed, and which is formed on the second front side of the second rewiring element; a capping element having a third front side and a third rear side, wherein the third rear side is applied to the second front side for capping the sensor structure; and a recess formed in the base substrate on the second rear side, or in the capping element on the third front side, and within which the ASIC substrate is suspended on a flexible layered first suspension element via the first rewiring element, forming a cavity which surrounds the ASIC chip. |
地址 |
Stuttgart DE |