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发明名称
Porous SIOx materials for improvement in SIOx switching device performances
摘要
A porous memory device, such as a memory or a switch, may provide a top and bottom electrodes with a memory material layer (e.g. SiO
申请公布号
AU2014353091(A8)
申请公布日期
2016.05.26
申请号
AU20140353091
申请日期
2014.11.19
申请人
WILLIAM MARSH RICE UNIVERSITY
发明人
TOUR, JAMES M.;WANG, GUNUK;YANG, YANG;JI, YONGSUNG
分类号
H01L29/04
主分类号
H01L29/04
代理机构
代理人
主权项
地址
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