| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element manufacturing method having a polishing process excellent in polishing speed and washability.SOLUTION: A semiconductor element manufacturing method of the present embodiment is a semiconductor element manufacturing method of performing polishing by using a polishing agent slurry containing polishing agent particles which includes mixed crystal of two and more kinds of metal oxides. One kind of the metal oxide is cerium oxide within a range of 50-90 mol% with respect to the polishing agent particles; and the other kind of the metal oxide is at least one selected from yttrium oxide, gadolinium oxide, lanthanum oxide, iron oxide and manganese oxide within a range of 5-50 mol%; and a total sum of the metal oxides is 90 mol% and over. The semiconductor element manufacturing method further comprises: a polishing process of performing polishing by using the polishing agent slurry adjusted to be alkaline; and a washing process of performing washing by using a wash solution adjusted to be acid.SELECTED DRAWING: None |
