SEMICONDUCTOR STRUCTURES INCLUDING DIELECTRIC MATERIALS HAVING DIFFERING REMOVAL RATES

摘要

Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.

主权项

1. A semiconductor structure, comprising:
a stack of alternating oxide materials and control gates, each of the oxide materials of the stack comprising at least two oxide portions of different densities; charge storage structures laterally adjacent to the control gates; a charge block material between each of the charge storage structures and the respective laterally adjacent control gate; and a pillar extending through the stack of alternating oxide materials and control gates.