Semiconductor Device Having Plural Memory Chip

摘要

A semiconductor device includes a stacked plurality of memory chips. The memory chips each include a plurality of memory banks, a plurality of read/write buses that are assigned to the respective memory banks, and a plurality of penetration electrodes that are assigned to the respective read/write buses and arranged through the memory chip. Penetration electrodes arranged in the same positions as seen in a stacking direction are connected in common between the chips. In response to an access request, the memory chips activate the memory banks that are arranged in respective different positions as seen in the stacking direction, whereby data is simultaneously input/output via the penetration electrodes that lie in different planar positions.

主权项

1. A method for operating a semiconductor device comprising a plurality of stacked memory chips, each comprising a plurality of memory banks, a plurality of data buses for transferring data to/from an associated one of the memory banks, and a plurality of penetration electrodes penetrating through the memory chip for transferring data to/from an associated one of the data buses, the method comprising:
providing an address signal indicating an address value in common to the plurality of stacked memory chips; simultaneously selecting first and second memory chips from the plurality of stacked memory chips based on the address value; and transferring the data to/from the first and second memory chips by corresponding penetration electrodes in parallel when simultaneously selected.