SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME

摘要

A semiconductor device may include a semiconductor substrate, a conductive pad on the semiconductor substrate, a passivation layer overlying the semiconductor substrate and exposing the conductive pad, and a bump structure. The bump structure may include a first bump structure on the conductive pad and a second bump structure on the passivation layer. The first bump structure may include a base bump layer, a first pillar bump layer, and a first solder bump layer that are sequentially stacked on the conductive pad. The second bump structure may include a second pillar bump layer and a second solder bump layer that are sequentially stacked on the passivation layer.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a conductive pad on the semiconductor substrate; a passivation layer on the semiconductor substrate, the passivation layer including an opening exposing the conductive pad; a first under bump metal (UBM) layer on the exposed conductive pad, and a second under bump metal (UBM) layer on the passivation layer; a first bump structure on the first UBM layer, the first bump structure including a base bump layer, a first pillar bump layer, and a first solder bump layer sequentially stacked on the first UBM layer; and a second bump structure on the second UBM layer, the second bump structure including a second pillar bump layer and a second solder bump layer sequentially stacked on the second UBM layer.