Bond Pad Having Ruthenium Covering Passivation Sidewall

摘要

A method of forming bond pads includes providing a substrate including an integrated circuit (IC) device formed thereon having an oxidizable uppermost metal interconnect layer which provides a plurality of bond pads that are coupled to circuit nodes on the IC device. The plurality of bond pads include a metal bond pad area. At least one passivation layer provides a trench including dielectric sidewalls above the metal bond pad area. A ruthenium (Ru) layer is deposited directly on the dielectric sidewalls and directly on the metal bond pad area, which removes the need for a barrier layer lining the dielectric sidewalls of the trench. The Ru layer is patterned to provide a bond pad surface for the plurality of bond pads.

主权项

1. A device, comprising:
a semiconductor substrate; a metal layer formed above the semiconductor substrate; a bond pad metal area formed above the metal layer and coupled to the metal layer using a via plug; a passivation layer patterned with an opening exposing the bond pad metal area, the passivation layer forming a trench with the bond pad metal area, the trench having passivation sidewalls; and a ruthenium (Ru) layer covering the passivation sidewalls and the bond pad metal area.