发明名称 METHOD AND STRUCTURE TO CONTACT TIGHT PITCH CONDUCTIVE LAYERS WITH GUIDED VIAS
摘要 An apparatus including a circuit substrate; a first interconnect layer in a first plane on the substrate and a second interconnect layer in a different second plane on the substrate; and a hardmask layer separating the first interconnect layer and the second interconnect layer, wherein the hardmask layer comprises alternating guide sections comprising different hard mask materials, and a via guide. A method including forming a dielectric layer on an integrated circuit structure; forming a first interconnect layer having interconnect lines in the dielectric layer; forming a hardmask layer on a surface of the dielectric layer, the hardmask layer comprising alternating hardmask materials which form guide sections over the interconnect lines; forming a via guide in one of the guide sections; and forming a second interconnect layer over the hardmask guide layer which is electrically connected to one of the interconnect lines through the via guide.
申请公布号 US2016148869(A1) 申请公布日期 2016.05.26
申请号 US201314905269 申请日期 2013.08.21
申请人 INTEL CORPORATION 发明人 SCHENKER Richard E.;TAN Elliot N.
分类号 H01L23/522;H01L21/02;H01L21/768;H01L21/033;H01L21/311;H01L23/528 主分类号 H01L23/522
代理机构 代理人
主权项 1. An apparatus comprising: a circuit substrate; a first interconnect layer in a first plane on the substrate and a second interconnect layer in a different second plane on the substrate; and a hardmask layer separating the first interconnect layer and the second interconnect layer, wherein the hardmask layer comprises alternating guide sections, each of the alternating guide sections comprising different hard mask materials, and a via guide formed in at least one of the alternating guide sections for electrical connection of the first interconnect layer to the second interconnect layer.
地址 Santa Clara CA US