LASER CRYSTALLIZATION OF THIN FILMS ON VARIOUS SUBSTRATES AT LOW TEMPERATURES

摘要

A method and system are provided for crystallizing thin films with a laser system. The method includes obtaining a thin film comprising a substrate and a target layer that contains nano-scale particles and is deposited on the substrate. The heat conduction between the target layer and the substrate of the thin film is determined based on thermal input from the laser system to identify operating parameters for the laser system that cause crystallization of the nano-scale particles of the target layer in an environment at near room temperature with the substrate remaining at a temperature below the temperature of the target layer. The laser system is then operated with the determined operating parameters to generate a laser beam that is transmitted along an optical path to impinge the target layer. The laser beam is pulsed to create a localized rapid heating and cooling of the target layer.

主权项

1. A method of inducing crystallization in thin films with a laser system, the method comprising:
obtaining a thin film comprising a substrate and a transparent conducting oxide (TCO) layer deposited on the substrate, wherein the TCO layer comprises nano-scale particles; determining the heat conduction between the TCO layer and the substrate of the thin film based on thermal input from the laser system to identify operating parameters for the laser system that cause crystallization and crystal growth of the nano-scale particles of the TCO layer in an environment at near room temperature with the substrate remaining at a temperature below the temperature of the TCO layer; locating a confinement layer over the thin film; transmitting a laser beam of the laser system along an optical path to impinge the TCO layer of the thin film, wherein the confinement layer is transparent to the laser beam and the laser beam travels through the confinement layer prior to impinging the TCO layer when transmitting the laser beam along the optical path; and then pulsing the laser beam to create a localized rapid heating and cooling of the TCO layer, wherein the laser system is operated at the operating parameters identified in the determining step to crystallize and induce crystal growth of the nano-scale particles of the TCO layer and maintain the substrate at a temperature below the temperature of the TCO layer.