| 摘要 |
A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1−x p-contact layer, wherein x<0.45. A first metal contact is in direct contact with the GaAsxP1−x p-contact layer. A second metal contact is electrically connected to the n-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. |
