| 摘要 |
Provided are a manufacturing method of low temperature substrate graphene, low temperature substrate graphene, and an electronic part comprising the same. The manufacturing method of low temperature substrate grown graphene comprises the following steps of: (1) arranging a metal layer on a substrate; (2) supplying carbon-containing gas and etching gas at the temperature less than or equal to 500°C, and conducting inductively coupled plasma-chemical vapor deposition (ICP-CVD); (3) supplying etching gas for metal when supplying the carbon-containing gas, and growing graphene on the metal layer; and (4) continuously conducting ICP-CVD from the process of the step (3), and growing graphene on the substrate without including the metal layer by continuously removing the metal in the metal layer by the etching gas. |
