| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase ESD tolerance of a gate-off-transistor type ESD protection element. <P>SOLUTION: An increase of the effective volume of a second conductivity type drain high-concentration diffusion layer is achieved by providing a trench in a region which is to be the second conductivity type drain high-concentration diffusion layer and embedding a second conductivity type polycrystalline silicon film in the trench. By this means, the same effect is obtained as when a distance from a gate electrode to a drain contact hole is extended. A semiconductor device of the present invention acts as a gate-off-transistor type ESD protection element in which ESD tolerance can be increased with no change in element size. <P>COPYRIGHT: (C)2012,JPO&INPIT |
