| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable evaluation of a highly accurate defect density by CPM (Constant Photocurrent Method) measurement even in a wide-gap semiconductor. <P>SOLUTION: A fitting value F(x) of an absorption coefficient derived from an irradiation light quantity obtained by CPM measurement at not more than a wavelength (λ<SB POS="POST">Eg</SB>) and not less than a predetermined wavelength range of a band gap of a wide-gap semiconductor, and an absorption coefficient separately measured at not more than λ<SB POS="POST">Eg</SB>and not less than the predetermined wavelength range of the wide-gap semiconductor is set at not less than 0.0001 and not more than 1, preferably not less than 0.0001 and not more than 0.1. <P>COPYRIGHT: (C)2013,JPO&INPIT |
