发明名称 |
Unit cell of nonvolatile memory device and nonvolatile memory device with the same |
摘要 |
Disclosed are a unit cell capable of improving a reliability by enhancing a data sensing margin in a read operation, and a nonvolatile memory device with the same. The unit cell of a nonvolatile memory device includes: an antifuse (ANT_FS) having a first terminal between an input terminal and an output terminal; and a first switching unit (SW) coupled between a second terminal of the antifuse and a ground voltage terminal (D). |
申请公布号 |
EP2264714(B1) |
申请公布日期 |
2016.05.25 |
申请号 |
EP20090252402 |
申请日期 |
2009.10.12 |
申请人 |
MAGNACHIP SEMICONDUCTOR LTD. |
发明人 |
SHIN, CHANG-HEE;CHO, KI-SEOK;JEON, SEON-DO;YOUN-JANG, KIM |
分类号 |
G11C17/16;G11C17/18;G11C29/00;H01L21/8246 |
主分类号 |
G11C17/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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